savantic semiconductor product specification silicon npn power transistors 2SD1772 2SD1772a d escription with to-220fa package complement to type 2sb1192/1192a large collector power dissipation applications for power amplification for tv vertical deflection output pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings at ta=25 symbol parameter conditions value unit v cbo collector-base voltage open emitter 200 v 2SD1772 150 v ceo collector- emitter voltage 2SD1772a open base 180 v v ebo emitter-base voltage open collector 6 v i c collector current (dc) 1 a i cm collector current-peak 2 a t c =25 25 p c collector power dissipation t a =25 2 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220fa) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD1772 2SD1772a characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2SD1772 150 v (br)ceo collector-emitter breakdown voltage 2SD1772a i c =5ma , i b =0 180 v v (br)ebo emitter-base breakdown voltage i e =0.5ma , i c =0 6 v v cesat collector-emitter saturation voltage i c =500ma ;i b =50ma 1.0 v v be base-emitter on voltage i c =300ma ; v ce =10v 1.0 v i cbo collector cut-off current v cb =200v; i e =0 50 a i ebo emitter cut-off current v eb =4v; i c =0 50 a h fe-1 dc current gain i c =100ma ; v ce =10v 60 240 h fe-2 dc current gain i c =300ma ; v ce =10v 50 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 27 pf f t transition frequency i c =100ma ; v ce =10v;f=1mhz 20 mhz h fe-1 classifications q p 60-140 100-240
savantic semiconductor product specification 3 silicon npn power transistors 2SD1772 2SD1772a package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm)
savantic semiconductor product specification 4 silicon npn power transistors 2SD1772 2SD1772a
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